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| Title: | Device parameter optimization of strained Si channel SiGe/Si n-MODFET's using a one-dimensional charge control model |
| Author/Creator: | Halkias, G. Vegiri, Aliki |
| Date: | 1998 |
| Type: | Journal Article (Scientific Journal article) |
| Publisher: | I E E E |
| Journal Title: | I E E E Transactions on Electron Devices |
| Volume: | 45 |
| Issue: | 12 |
| Pages: | 2430-2436 |
| Peer Reviewed: | Yes |
| Language: | English |
| ISSN: | 0018-9383 |
| URL: | http://hdl.handle.net/10442/7191 |
| Other Identifiers: | DOI: http://dx.doi.org/10.1109/16.735719 |
| Journal web Location : | http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 |
| Source: | I E E E Transactions on Electron Devices 45:12(Dec1998):2430-2436 |
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