Εξειδίκευση τύπου :	Άρθρο σε επιστημονικό περιοδικό
Τίτλος:	Laser-microstructured ZnO/p-Si photodetector with enhanced and broadband responsivity across the ultraviolet–visible–near-infrared range
Δημιουργός/Συγγραφέας:	Chatzigiannakis, Georgios Jaros, Angelina Leturcq, Renaud Jungclaus, Jorgen Voss, Tobias Gardelis, Spyros [EL] Κάνδυλα, Μαρία[EN] Kandyla, Maria
Εκδότης:	American Chemical Society
Ημερομηνία:	2020-10-04
Γλώσσα:	Αγγλικά
ISSN:	2637-6113 2637-6113
DOI:	10.1021/acsaelm.0c00492
Περίληψη:	We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation. Microstructured p-type silicon was obtained by ns-laser irradiation in SF6 gas, which results in the formation of quasi-ordered and uniform microspikes on the silicon surface. The irradiated silicon contains sulfur impurities, which extend its absorbance to the near infrared. A thin film of ZnO was conformally deposited on the microstructured silicon substrates by ALD. Photoluminescence measurements indicate high crystalline quality of the ZnO film after annealing. Current-voltage (I-V) measurements of the ZnO/p-Si heterodiodes in dark show a non-linear behavior with unusual high current values in reverse bias. Under illumination photocurrent is observed for reverse bias, even for wavelengths below the silicon bandgap in the case of the laser-microstructured photodetectors. Higher current values are measured for the microstructured photodetectors, compared to planar ones. Photoconductivity measurements show enhanced responsivity across the UV-Vis-NIR spectral range for the laser-microstructured devices, due to their increased surface area and light absorption.
Τίτλος πηγής δημοσίευσης:	ACS Applied Electronic Materials
Τόμος/Κεφάλαιο:	2
Τεύχος:	9
Σελίδες:	2819–2828
Θεματική Κατηγορία:	[EL] Φυσική[EN] Physics [EL] Φασματοσκοπία[EN] Spectroscopy [EL] Τεχνολογικές καινοτομίες. Αυτοματοποίηση[EN] Technological innovations. Automation
Λέξεις-Κλειδιά:	Material science Mesoscopic systems and quantum hall effect Electrical conductivity Heterojunctions Oxides Silicon ZnO Laser-microstructured silicon Heterojunction Photodetector Photoluminescence Photoconductivity
Κάτοχος πνευματικών δικαιωμάτων:	Copyright © 2020 American Chemical Society
Ηλεκτρονική διεύθυνση στον εκδότη (link):	http://arxiv.org/pdf/2010.01586v1 https://pubs.acs.org/doi/10.1021/acsaelm.0c00492
Ηλεκτρονική διεύθυνση περιοδικού (link) :	https://pubs.acs.org/journal/aaembp
Εμφανίζεται στις συλλογές:	Ινστιτούτο Θεωρητικής και Φυσικής Χημείας (ΙΘΦΧ) - Επιστημονικό έργο