Εξειδίκευση τύπου :	Άρθρο σε επιστημονικό περιοδικό
Τίτλος:	Biaxial strain engineering of CVD and exfoliated single- and bi-layer MoS2 crystals
Δημιουργός/Συγγραφέας:	Michail, Antonios Anestopoulos, Dimitris Delikoukos, Nikos Parthenios, John Grammatikopoulos, Spyridon Tsirkas, Sotirios A. [EL] Λαθιωτάκης, Νεκτάριος N.[EN] Lathiotakis, Nektarios N. Frank, Otakar Filintoglou, Kyriakos Papagelis, Konstantinos
Εκδότης:	IOP Publishing
Ημερομηνία:	2021
Γλώσσα:	Αγγλικά
ISSN:	2053-1583
DOI:	10.1088/2053-1583/abc2de
Περίληψη:	Single- and bi-layer MoS2 are two-dimensional semiconductors able to withstand very large deformations before failure, standing out as suitable templates for strain engineering applications and flexible electronics. It is imperative, for the proper integration of this material in practical applications, that the relationship between material property and strain is well understood. Two dimensional MoS2 crystals fabricated by chemical vapor deposition or micromechanical exfoliation are transferred onto flexible substrates and subjected to biaxial tension on a carefully designed and assessed loading stage with high accuracy and control. The successful stress transfer from substrate to the overlying 2D crystal is identified by in-situ monitoring of the strain-induced phonon frequency and photoluminescence peak shifts. Reliable values for the mode Grüneisen parameters and exciton deformation potentials were obtained by studying a significant number of crystals. The experimental results are backed by density functional theory calculations and are in good agreement with the experiments. This work highlights the potential of these materials in strain engineering applications and gives accurate values for single- and bi-layer MoS2 thermomechanical parameters.
Τίτλος πηγής δημοσίευσης:	2D Materials
Τόμος/Κεφάλαιο:	8
Τεύχος:	1
Σελίδες:	art. no. 15023
Θεματική Κατηγορία:	[EL] Φυσική και θεωρητική χημεία[EN] Physical and theoretical chemistry [EL] Νανοτεχνολογία[EN] Nanotechnology
Λέξεις-Κλειδιά:	TMDCs Strain engineering MoS2 Raman PL Two-dimensional (2D) Biaxial
EU Grant identifier:	MIS 5002772
Κάτοχος πνευματικών δικαιωμάτων:	© 2020 IOP Publishing Ltd
Ηλεκτρονική διεύθυνση στον εκδότη (link):	https://iopscience.iop.org/article/10.1088/2053-1583/abc2de/meta
Σημειώσεις:	AM, JP and KP acknowledge support of this work by the project SPIVAST funded by Foundation for Research and Technology Hellas. N.N.L. acknowledges support by the 'National Infrastructure in Nanotechnology, Advanced Materials and Micro/Nanoelectronics' (MIS 5002772), and by FLAG‐ERA-"GATES" (JTC‐PCI2018‐093137, MIS 5002772), funded by the Operational Programme 'Competitiveness, Entrepreneurship and Innovation' (NSRF 2014-2020) and co-financed by Greece and the European Union (European Regional Development Fund). KF acknowledges financial support by the Stavros Niarchos Foundation within the framework of the project ARCHERS ('Advancing Young Researchers' Human Capital in Cutting Edge Technologies in the Preservation of Cultural Heritage and the Tackling of Societal Challenges').
Εμφανίζεται στις συλλογές:	Ινστιτούτο Θεωρητικής και Φυσικής Χημείας (ΙΘΦΧ) - Επιστημονικό έργο