Εξειδίκευση τύπου :	Άρθρο σε επιστημονικό περιοδικό
Τίτλος:	Tuning the Photoluminescence and Raman Response of Single-Layer WS2 Crystals Using Biaxial Strain
Δημιουργός/Συγγραφέας:	Michail, Antonios Anestopoulos, Dimitris Delikoukos, Nikos Grammatikopoulos, Spyridon Tsirkas, Sotirios A. [EL] Λαθιωτάκης, Νεκτάριος N.[EN] Lathiotakis, Nektarios N. Frank, Otakar Filintoglou, Kyriakos Parthenios, John Papagelis, Konstantinos
Εκδότης:	ACS Publications
Ημερομηνία:	2023
Γλώσσα:	Αγγλικά
ISSN:	1932-7447 1932-7455
DOI:	10.1021/acs.jpcc.2c06933
Περίληψη:	Chemical vapor deposited WS2 monolayers are subjected for the first time to controlled pure biaxial tensile strain up to 0.7%. From photoluminescence (PL) spectroscopy, the trion and neutral exciton deformation potentials are found to be similar, approximately −130 meV/%. It is shown that the excess carrier concentration as well as residual strain in WS2 samples can be determined from the PL spectra. The experimental Grüneisen parameter of the in-plane E′ Raman mode for 1L-WS2 is found to be equal to the corresponding mode (E2g) mode in bulk WS2. The impact of mechanical strain on the electronic and phonon band structures is also calculated in the framework of density functional theory. The theoretically obtained deformation potential for the direct transition is in very good agreement with the experiment. The reduced dimensionality of the monolayer enables the visualization over the entire Brillouin zone of both the calculated phonon dispersions and the Grüneisen parameters, which are compared with the experimentally accessible ones. This work contributes to the experimental implementation of mechanical strain engineering applications in semiconducting two-dimensional transition metal dichalcogenides.
Τίτλος πηγής δημοσίευσης:	The Journal of Physical Chemistry C
Τόμος/Κεφάλαιο:	127
Τεύχος:	7
Σελίδες:	3506−3515
Θεματική Κατηγορία:	[EL] Χημική μηχανική[EN] Chemical engineering [EL] Χημεία[EN] Chemistry
Λέξεις-Κλειδιά:	Biaxial Strains Biaxial Tensile Strain Carrier Concentration Chemical Vapor Deposited Deformation Potential
EU Grant:	SPIVAST Nanoporous Graphene membrane made without Transfer for gas Separation Reinforcement of Postdoctoral Researchers – 2nd Cycle
EU Grant identifier:	MIS:5041612 MIS-5033021
Κάτοχος πνευματικών δικαιωμάτων:	© 2023 American Chemical Society
Ηλεκτρονική διεύθυνση στον εκδότη (link):	https://doi.org/10.1021/acs.jpcc.2c06933
Εμφανίζεται στις συλλογές:	Ινστιτούτο Θεωρητικής και Φυσικής Χημείας (ΙΘΦΧ) - Επιστημονικό έργο